This is called then, plasma etching.

In addition to the standard, liquid-based techniques, the semiconductor industry commonly uses plasma etching.

In another method graphene nanoribbons are produced by plasma etching of nanotubes partly embedded in a polymer film.

Ordinary plasma etching operates between 0.1 and 5 Torr.

Technology of dry etching or plasma etching of silicon and semiconductor wafers.

Nitrogen trifluoride is used in the plasma etching of silicon wafers.

Next the substrate is used to transfer the given pattern onto the nitride membrane (stencil mask) using the process of plasma etching.

Boron trichloride gas is also an important chemical in semiconductor industry, however not for doping but rather for plasma etching of metals and their oxides.

Although plasma etching was widely used in R&D during the 1970s, it had yet to prove practical in a production environment.

The analog-controlled process lacked the precision required by the complex chemistry of plasma etching.