Allows very precise control of doping levels and gradients.

In a semiconductor, the doping level also affects the Mott transition.

There are significant differences both in doping levels, ions used, and transistor size.

Slight changes to the amount of diffusion time, uneven doping levels, etc. can have large effects on device properties.

It is critical to device performance to monitor the doping level and thickness of an epitaxial layer.

This optimum depends on the doping levels of shallow and deep traps as well as the annealing conditions for the crystal samples.

The thicker the layer and the lower its doping level, the higher the breakdown voltage.

This technology is used to grow a film which is more pure than the substrate and to fabricate layers having different doping levels.

With increased doping level of the semiconductor the width of the depletion region drops.

At very high doping levels the junction does not behave as a rectifier anymore and becomes an ohmic contact.