Two important characteristics of CMOS devices are high noise immunity and low static power consumption.

Earlier, the power consumption of CMOS devices was not the major concern while designing chips.

This means that the current draw of CMOS devices increases with switching rate (controlled by clock speed, typically).

Originally the bipolar circuits provided higher speed but consumed more power than the competing 4000 series of CMOS devices.

In the CMOS device the diodes are sampled directly by the scanning logic.

In one of its applications it is used along with nitrous oxide to form oxynitride gates in CMOS devices.

TTL is less sensitive to damage from electrostatic discharge than early CMOS devices.

As with the case of oxide thickness affecting threshold voltage, temperature has an effect on the threshold voltage of a CMOS device.

The microcontroller is a CMOS device and normal anti-static handling procedures should be followed.

This helps eliminate the noise that results from the speedy switching on CMOS devices.